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SONI PRAYOGI

Universitas Pertamina S1 - Teknik Elektro SINTA ID : 6795675
1.227
SINTA Score Overall
764
SINTA Score 3Yr
0
Affil Score
0
Affil Score 3Yr
Latest number of publications
  Scopus Analysis  

Enhancement of the Silicon Nanocrystals’ Electronic Structure within a Silicon Carbide Matrix
Q3 as Journal Indonesian Journal of Chemistry
Author Order : 1 of 1     Creator : Prayogi S.
2024 0 cited
Electronic structure of P-type amorphous silicon nanowires
Q1 as Journal Physica Scripta
Author Order : 1 of 4     Creator : Prayogi S.
2023 0 cited
Unrevealing tunable resonant excitons and correlated plasmons and their coupling in new amorphous carbon-like for highly efficient photovoltaic devices
Q1 as Journal Scientific Reports
Author Order : 8 of 14     Creator : Darminto D.
2023 2 cited
N-type H2-doped amorphous silicon layer for solar-cell application
Q1 as Journal Materials for Renewable and Sustainable Energy
Author Order : 1 of 4     Creator : Prayogi S.
2023 1 cited
Effect of active layer thickness on the performance of amorphous hydrogenated silicon solar cells
Q3 as Journal Engineering and Applied Science Research
Author Order : 1 of 4     Creator : Prayogi S.
2022 3 cited
The Effects of Dopant Concentration on the Performances of the a-SiOx:H(p)/a-Si:H(i1)/a-Si:H(i2)/µc-Si:H(n) Heterojunction Solar Cell
Q2 as Journal International Journal of Renewable Energy Development
Author Order : 2 of 5     Creator : Hamdani D.
2022 7 cited
Observation of resonant exciton and correlated plasmon yielding correlated plexciton in amorphous silicon with various hydrogen content
Q1 as Journal Scientific Reports
Author Order : 1 of 8     Creator : Prayogi S.
2022 4 cited
The influences of the front work function and intrinsic bilayer (i1, i2) on p-i-n based amorphous silicon solar cell’s performances: A numerical study
Q2 as Journal Cogent Engineering
Author Order : 2 of 5     Creator : Hamdani D.
2022 4 cited
Electronic structure analysis of a-Si: H p-i1-i2-n solar cells using ellipsometry spectroscopy
Q2 as Journal Optical and Quantum Electronics
Author Order : 1 of 3     Creator : Prayogi S.
2022 3 cited
The effect of adding an active layer to the structure of a-Si: H solar cells on the efficiency using RF-PECVD
Q2 as Journal Journal of Materials Science: Materials in Electronics
Author Order : 1 of 5     Creator : Prayogi S.
2021 8 cited
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Summary

Article Quartile
Research Output
  Scopus GScholar WOS
Article 13 70 12
Citation 43 276 35
Cited Document 11 37 9
H-Index 4 9 4
i10-Index 0 9 0
G-Index 1 1 1
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